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水平带状硅生长炉热场结构设计及数值模拟
论文作者:童鞋论文网  论文来源:www.txlunwenw.com  发布时间:2019/10/30 8:50:35  

摘要:目前制约太阳能开发利用的主要因素是硅片的生产成本,由于目前线切割技术的局限性,在硅片生产过程中硅料损失高达60 %。如果能实现硅片的直接拉制成型,免去切割工艺,将大大的减少太阳能的开发利用成本。为此,研究人员开发了多种硅带直接提拉成型的制造方法,如定边喂膜法、线牵引带硅生长法、衬底带硅生长法及水平带状硅生长法。尽管国际上对带状硅直接提拉成型工艺的研究已经进行了几十年,但国内目前对于带状硅直拉成型工艺的研究开发极少。本文根据对国外研究的深入了解,设计了一台水平带状硅生长炉的热场结构,并通过数值模拟对结构进行论证优化。

本文首先对水平带硅生长炉的热场理论基础和影响机理进行了简单介绍。其次对多晶硅硅料的熔点以及融化速率进行测定,然后以Alison S. Greenlee提出水平生长射流机构测试设备,Oliveros GA提出的浮硅法硅片生长原理以及对线拉带硅生长炉的研究作为参考,对水平带状硅生长炉热场的主要结构如坩埚,加热器,隔热层,射流机构进行了选材及结构设计。采用COMSOL软件对水平带状硅生长炉的热场结构进行模拟分析,论证了水平带状硅生长炉热场结构设计的合理性。

最后,本文在结构设计的基础上,模拟分析了射流冷却机构在不同射流速度、射流间距、射流口宽的对冷区流场、温度场以及硅熔体上表面平均换热系数的影响。研究结果表明:射流速度越快,射流间距越小,射流口宽度越大,凝固界面处的换热效率越高,带硅的结晶速度就可以越快。根据模拟结果,优化后的射流机构设计参数为射流口宽度为2 mm,射流间距为8 mm。考虑到实验时对温度场以及流场的控制难度问题,选择未来实验时初始射流流速为5 m/s。

At present, the main cost factor thatrestricts the development and utilization of solar energy is the productioncost of silicon wafers. Due to the limitations of current wire-cuttingtechnology, the silicon material loss during the production of silicon wafersis as high as 60%. If the direct drawing of silicon wafers can be realized andthe cutting process is eliminated, the development and utilization costs ofsolar energy will be greatly reduced. To this end, researchers have developed avariety of silicon strip direct-drawing molding manufacturing methods, such asthe fixed-edge film feeding method, the wire traction belt silicon growthmethod, the substrate with silicon growth method and the horizontal stripsilicon growth method. Although the research on the direct stripping technologyof ribbon silicon has been carried out for several decades in the world, theresearch and development of the strip silicon straight-drawing forming processin China is very few at present. In this paper, based on the in-depthunderstanding of foreign studies, a thermal field structure of a horizontalstrip silicon growth furnace was designed, and the structure was optimizedthrough numerical simulation.

In this paper, the theoretical basis andthe influencing mechanism of the thermal field of a horizontal silicon growth furnaceare briefly introduced. Secondly, the melting point and melting rate ofpolysilicon silicon material were measured, and then Alison S. Greenleeproposed the horizontal growth jet mechanism test equipment. The principle ofsilicon wafer growth by floatation silicon put forward by Oliveros GA and thestudy of the line pulling silicon growth furnace were used for reference. Themain structure of the thermal field of the horizontal belt-shaped silicongrowth furnace such as crucibles, heaters, heat insulation layers, and jetstructures were selected and structurally designed. The COMSOL software wasused to simulate the thermal field structure of the horizontal strip silicongrowth furnace, and the rationality of the thermal field structure design of thehorizontal strip silicon growth furnace was demonstrated.

Finally, based on the structural design,this paper simulates and analyzes the effects of jet cooling mechanism on theflow field, temperature field, and the average heat transfer coefficient of theupper surface of the silicon melt at different jet velocity, jet spacing, andjet width. The results show that the faster the jet velocity is, the smallerthe jet spacing is, and the wider the jet port width is, the higher the heattransfer efficiency at the solidification interface is, and the faster thesilicon crystallization speed can be. According to the simulation results, thedesign parameters of the optimized jet mechanism are jet orifice width of 2 mmand jet spacing of 8 mm. Considering the difficulty of controlling thetemperature field and flow field during the experiment, the initial jet flowvelocity is selected to be 5 m/s in the future experiment.

关键词:直接拉制成型;水平带状硅生长炉;热场;结构设计;数值模拟

direct forming ; horizontal strip silicongrowth furnace; thermal field; structural design; numerical simulation

上一篇:新型单晶硅水平条带生长机理及控制系统研究     下一篇:ZQF216-110型铁钻工冲扣钳的结构分析与优化设计
 
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